The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total 'on' resistance of the device.
增强的空穴沟道迁移率导致导通电阻的沟道部分减小，因此，有利地减少了装置的全“导通”电阻。
In addition, this model is involved in the velocity saturation effect, mobility degradation effect and channel length modulation effect.
模型中同时考虑了速度饱和效应、迁移率下降效应和沟道长度调制效应等。
We represent a temperature model of surface carrier mobility of short channel MOST after thinking about kinds of dispersion effect.
在考虑了各种散射效应对迁移率的影响后，提出了短沟道MOST表面载流子迁移率的温度模型。
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