A detection method for obtaining the micro bulk defect size in semiconductive materials by analyzing near infrared laser scattering light distribution is presented.
提出了利用近红外激光散射光强分布分析来检测半导体材料内部微体缺陷的检测方法。
A detection method for obtaining the micro bulk defect size in semiconductive materials by analyzing near infrared laser scattering light distribution is presented.
提出了利用近红外激光散射光强分布分析来检测半导体材料内部微体缺陷的检测方法。
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