Additional buffer layers can be included following the same steps.
额外的缓冲层可以包含以下相同的步骤。
The influence of nitridation temperature and nitrogen flow rate on the growth of buffer layers is emphasized.
主要考察了氮化温度和氮气流量对缓冲层生长的影响。
The yttrium-stabilized zirconia(YSZ)and strontium titanium(STO)film buffer layers were prepared by Sol-gel process on Si substrates.
采用溶胶-凝胶法在硅基板上先分别制备钇稳定氧化锆（YSZ）和钛酸锶（STO）两种薄膜缓冲层。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
The YBCO thin films were prepared by dipping method on buffer layers. The heat treatment condition and crystal structure of the YBCO nanometer films were discussed.
进一步对YBCO纳米薄膜的热处理工艺、薄膜形貌和微观组织结构进行了初步研究。
Sk_buffs provide efficient buffer handling and flow control mechanisms for all networking layers.
sk_buffs为所有网络层提供有效的缓冲器处理和流控制机制。
The sword back cushion one or two layers of transparent adhesive tape to buffer the die cutting production.
在刀不背上垫一层或两层透明胶带，以缓冲模切爆发的波动。
The sword back cushion one or two layers of transparent adhesive tape to buffer the die cutting production.
在刀不背上垫一层或两层透明胶带，以缓冲模切爆发的波动。
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