高温超导带材出现后，经过十多年的努力，目前已经取得了突破性的进展，在织构金属基带、多层过渡层（Buffer Layers）、连续YBCO超导膜涂覆等工艺技术和系统设备方面日益成熟起来。
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pzt buffer layers pzt缓冲层
InP buffer layers InP缓冲层
ZnO buffer layers ZnO缓冲层
SiC buffer layers 碳化硅缓冲层
local shielding buffer layers 缓冲屏蔽
Low temperature Si buffer layers 低温Si缓冲层
The results of the buffer layers preparation on the surface with c(2×2)-S superstructure proved the effectiveness of the new sulfur method on improving the physical chemistry property of the surface of NiW substrates and epitaxial growth of the oxide layers.
新硫化处理技术改善了NiW基带表面的物理化学特性,有利于氧化物缓冲层的外延生长。
参考来源 - 涂层导体用NiW合金基带表面改性研究This multilayer approach makes it possible to fabricate very high critical current coated conductors. The process of multi-buffer layers increases the cost of the second generation YBCO HTSC wires, and makes them impractical to use for commercial applications.
涂层导体的低成本研究多层过渡层工艺的复杂性增加了带材的制备成本从而影响了第二代带材的大规模使用。
参考来源 - YBCO高温超导带材的制备和实用化研究The GaN films grew at 1000℃, using gallium and ammonia as raw materials, Al and Au/Al as buffer layers.
2、以金属镓和氨气为原料,金属Al和Au/Al为缓冲层,在1000℃下生长GaN薄膜。
参考来源 - GaN纳米材料的CVD制备与研究·2,447,543篇论文数据，部分数据来源于NoteExpress
Additional buffer layers can be included following the same steps.
额外的缓冲层可以包含以下相同的步骤。
The influence of nitridation temperature and nitrogen flow rate on the growth of buffer layers is emphasized.
主要考察了氮化温度和氮气流量对缓冲层生长的影响。
The yttrium-stabilized zirconia(YSZ)and strontium titanium(STO)film buffer layers were prepared by Sol-gel process on Si substrates.
采用溶胶-凝胶法在硅基板上先分别制备钇稳定氧化锆（YSZ）和钛酸锶（ STO）两种薄膜缓冲层。
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