The distal end of the flexible arms 28 flexibly suspend the bond pad area 26 of the head support means.
在28灵活的双臂末端灵活暂停焊盘面积26头的支持手段。
To simulate the long gold wire and large bond pad, an equivalent method was presented in thermal analysis.
为了用较小的规模模拟相对较长的金线和较大的焊盘，提出了一种温度场分析的等效方法。
Both a passivation layer (18) and a polyimide layer (22) separate the last interconnect layer (16) and the bond pad (28).
钝化层(18)和聚酰亚胺层(22)将最后的互连层(16)和接合焊盘(28)隔开。
The bond pad (28) is then formed in contact with the barrier (26), and a wire bond (30) is then made to the bond pad (28).
随后形成接合焊盘（28）以接触阻挡（26），且随后对接合焊盘（28）完成线接合（30）。
The yield of wire bond mainly depends on the bondability of the bond pad which is affected by the surface characteristics.
引线键合的效率主要依赖于受表面特性影响的键合点的可焊性。
The patterned bond pad includes a plurality of portions electrically connected to each other, and at least one opening therein.
第一图案化接合垫包括彼此电性连接的多个部位以及位于其内的至少一开口。
The head support means are constructed and arranged for supporting a head slider bonded to one face of a bond pad area 26 thereof.
头支持手段是建造和支持头滑块粘结的一个焊盘面积安排26条脸。
The head support means has a pair of substantially parallel flexible longitudinal arms 28 substantially enclosing the bond pad area 26.
头支持意味着有大量并行灵活的28对纵向武器大幅内附焊盘面积26。
If the Al film on the bond pad is pierced through by the probe in wafer probing, the wire bonding strength and device reliability would be affected.
在芯片测试中，若引线焊盘上的铝层被探针扎穿，就会影响引线键合的牢固性和器件的可靠性。
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).
一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).
一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。
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