A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
Each device has an eight-bit CMOS shift register and CMOS control circuitry, eight CMOS data latches, and eight bipolar current-sinking Darlington output drivers.
每个器件都有一个八位CMOS移位寄存器和CMOS控制电路，八个CMOS数据锁存，八个双极电流吸收达林顿输出驱动器。
The device size can be greatly shrunk with effectively suppressing short channel effect and parasitic bipolar effect in conventional MOSFET.
这种结构器件能有效降低困扰常规MOSFET的短沟效应和寄生的双极效应，能大幅度减小器件尺寸。
This paper proposed a way of high density bipolar three HDB3 code based on ISP(in-system programmable digital circuits)device.
提出了一种采用ISP大规模可编程器件实现高密度HDB3码的一种实验方法。
If another pacemaker is used, it should have a bipolar pacing reset mode and be programmed for bipolar pacing to minimize the possibility of the output pulses being detected by the device.
如果患者使用有其他起搏器，则该起搏器应具有一个双极起搏重置模式并针对双极起搏进行程控，以使其输出脉冲被脉冲发生器检测到的可能性降至最小。
Working in a 600v DC power supply system, the type ZDB battery charger USES new power electronic insulated-gate bipolar transistors (IGBT) as switching device and adopts PWM control technics.
ZD B型直流电源变换器是工作在直流600v供电系统的变流装置。该装置以新颖电力器件IGBT作为开、关器件并采用PWM控制技术。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
双极结型晶体管，涉及半导体功率器件技术领域。
It has been designed and constructed with the Intersil High Frequency Bipolar Dielectric Isolation process and features dynamic parameters never before available from a truly differential device.
这已被设计与Intersil的高频双极电介质隔离工艺构造和特点，从一个以前从未真正差速器可用的动态参数。
It has been designed and constructed with the Intersil High Frequency Bipolar Dielectric Isolation process and features dynamic parameters never before available from a truly differential device.
这已被设计与Intersil的高频双极电介质隔离工艺构造和特点，从一个以前从未真正差速器可用的动态参数。
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