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A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
Each device has an eight-bit CMOS shift register and CMOS control circuitry, eight CMOS data latches, and eight bipolar current-sinking Darlington output drivers.
每个器件都有一个八位CMOS移位寄存器和CMOS控制电路，八个CMOS数据锁存，八个双极电流吸收达林顿输出驱动器。
The device size can be greatly shrunk with effectively suppressing short channel effect and parasitic bipolar effect in conventional MOSFET.
这种结构器件能有效降低困扰常规MOSFET的短沟效应和寄生的双极效应，能大幅度减小器件尺寸。
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