微波晶体管激光模型可以非常准确的预测频变电和光的属性。
The microwave transistor laser model is very accurate for predicting frequency-dependent electrical and optical properties.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
提出了一种新的设计微波晶体管放大器的电路模型，给出了通用优化设计程序。
This paper presents a new circuit model for designing a microwave transistor amplifier, and gives a general optimum programing.
在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
提出一种求解异质结双极晶体管(HBT)小信号等效电路模型的解析方法。
This paper discussed an analytical method for determining the heterojunction bipolar transistors (HBTs) equivalent circuit model.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
基于单电子系统半经典模型，分析了电阻耦合单电子晶体管的电学特性，得到其电学性能不随背景电荷分布变化的特点。
According to the semi classical model, by means of electrical characteristics analysis of R SET, it was proposed that the electrical performance of R SET was not affected by the background charge.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
本文采用较全面的包括四个寄生双极晶体管和MOS管的闩锁模型，详细分析了瞬态辐照下CMOS反相器的闩锁效应。
In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.
据此理论模型研制成功了电流增益温度特性优良的中小功率晶体管系列。
Based on the theoretical model, a new type of the transistor with low temperature coefficient of the current gain has been manufactured successfully.
本文介绍一种分析非晶硅场效应晶体管静态特性的非模型方法。
In this paper we shall present a non-model method on analyzing the static characteristic of a-Si FET.
本文介绍一种分析非晶硅场效应晶体管静态特性的非模型方法。
In this paper we shall present a non-model method on analyzing the static characteristic of a-Si FET.
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