微波晶体管激光模型可以非常准确的预测频变电和光的属性。
The microwave transistor laser model is very accurate for predicting frequency-dependent electrical and optical properties.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
提出了一种新的设计微波晶体管放大器的电路模型，给出了通用优化设计程序。
This paper presents a new circuit model for designing a microwave transistor amplifier, and gives a general optimum programing.
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