Used for ULSI manufacturing line, semiconductors manufacturing plants and Ultra clean laboratory.
ULSI制造工厂、半导体制造工厂、超净实验室、研究室等。
Various CVD technologies for preparing low dielectric constant materials in ULSI circuits are summarized.
综述了制备uls I低介电常数材料的各种CVD技术。
Shift from al to Cu interconnects in Ultra-Large Scale Integrate (ULSI) is important for semiconductor industry.
利用铜代替铝作为超大规模集成电路的互连接线，代表了半导体工业的重要转变。
The copper chemical-mechanical polishing (CMP) which is the key planarization technology for ULSI manufacturing was discussed.
对用于甚大规模集成电路(ULSI)制造的关键平坦化工艺———铜化学机械抛光(CMP)技术进行了讨论。
The latest advance of the dry etching for submicron fabrication in ULSI production and interrelated technology are introduced.
综述了亚微米、深亚微米干法刻蚀和相关技术的最新进展及其在超大规模集成电路制造中的应用。
A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented.
本发明提供用于ULSI半导体器件的具有自组装单分子层的铜线及其制造方法。
Dishing problem of copper multilayer interconnection in ULSI was introduced, and the reasons and influencing factors were analyzed.
介绍了UL SI多层铜互连线中的碟形坑问题，对其产生的原因及影响因素进行了分析。
The selectivity, the chemical and mechanical function's matching, the storage of the slurry and post CMP cleaning ULSI inlaid tungsten CMP have been studied in this article.
研究的是ULSI镶嵌钨CMP的选择性，化学与机械作用匹配，浆料的悬浮及存放和后清洗等问题。
The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
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