A novel kinetics model for dc reactive sputtering was proposed.
提出了一个新的直流反应溅动力学模型。
For reactive sputtering, the gradient films with varying ratio of chemical component can be prepared by changing gas flow rate continuously.
对于反应溅射，可通过连续改变反应气体流量制得化学成分比连续变化的梯度薄膜。
Through the technology of RF and DC reactive sputtering manufacture, H2S gas sensors have been developed on silicon substrate on which a heater made of Pt were attached.
通过交流和直流反应溅射，我们以硅基片（表面上有白金加热电极）为基底制作H_2S气敏元件。
In particular, the amorphous titanium oxide is obtained by using the reactive sputtering method and via deposition at a low temperature and at a high film formation rate.
特别是利用反应性溅射法，在低温下以高成膜速度进行堆积，得到非晶的氧化钛。
The effect on the electrical and optical properties is studied as ITO transparent conductive thin films prepared by DC magnetron reactive sputtering technique with different deposition parameters.
论述了高温直流磁控反应溅射法制备ito透明导电薄膜时氧分压、溅射气压和溅射电流等参数对其光电特性的影响。
Reactive magnetron sputtering was used to prepare many kinds of compound films extensively.
反应磁控溅射被广泛应用于制备化合物薄膜。
A1N films grown by low temperature reactive r. f. sputtering are investigated with spectrum analysis.
本文用光谱分析的方法研究低温反应射频溅射生长的A1N薄膜。
The compound fraction of target surface was gotten from the rate equations of sputtering and the transport equations of reactive particles .
由溅射速率方程和反应粒子输运方程得出了靶面化合物的覆盖度。
HfOxNy thin films were deposited by radio frequency reactive magnetron sputtering onto multi-spectral ZnS substrates at different oxygen partial pressure.
用磁控反应溅射法在不同氧分压下制备了氮氧化铪薄膜。
Niobium oxide optical thin films have been prepared by low frequency reactive magnetron sputtering system.
利用低频反应磁控溅射制备五氧化二铌光学薄膜。
ABSTRACT: in this paper a reactive ion plating method and system configuration of Gas ion source enhanced Magnetron Sputtering (GIMS) is presented in details.
摘要：本文详细介绍了气体离子源增强磁控溅射(气离溅射)反应离子镀膜技术和系统配置。
TiOx thin films at the conditions of different depositing temperatures were on prepared on glass substrates by DC reactive magnetron sputtering.
通过磁控反应溅射，在玻璃基底上制备了不同溅射温度下的氧化钛薄膜。
TiO2 thin films were deposited on glass and quartz substrates, respectively, using the direct current reactive magnetron sputtering method.
采用直流磁控反应溅射法，在玻璃和石英基体上制备了TiO2薄膜。
In this paper, WO3 thin film was deposited on glass substrate and silicon slice by DC reactive magnetron sputtering and using metal tungsten as target.
本文采用直流反应磁控溅射工艺，以金属钨为靶材，在玻璃和单晶硅片上沉积了WO 3薄膜。
Many processes are used to prepare transparent conductive films, such as magnetron sputtering, vacuum reactive evaporation, chemical vapor depositions, Sol-gel, laser-pulsed deposition.
多种工艺可以用来制备透明导电薄膜，如磁控溅射真空反应蒸发、化学气相沉积、溶胶-凝胶法以及脉冲激光沉积等。
High quality ITO transparent conductive film was prepared by reactive low voltage ion plating technique, which is different to the most common sputtering method to deposit ITO film.
溅射镀膜方法是制备ito透明导电膜最常用也是实验研究最多的方法。
ZnO: Al thin films were prepared on slide glass substrates by non-reactive DC magnetron sputtering at room temperature.
采用直流磁控溅射工艺，室温下在载玻片上制备了氧化锌铝透明导电薄膜。
The kinetic process of reactive magnetron sputtering has been studied.
研究了反应磁控溅射的动力学过程。
Tin doped indium oxide (ITO) films were deposited on glass substrates by reactive magnetron sputtering using a metallic alloy target (in Sn, 90 10).
采用铟锡合金靶(铟锡，90 - 10)，通过直流反应磁控溅射在玻璃基片上制备出ito薄膜，并在大气环境下高温退火处理。
Ultrathin aluminum films were prepared by DC reactive magnetron sputtering. The target was made by 99.999% pure aluminum.
采用直流磁控溅射法溅射纯度为99.999%的铝靶制备了超薄铝膜。
Ultrathin aluminum films were prepared by DC reactive magnetron sputtering. The target was made by 99.999% pure aluminum.
采用直流磁控溅射法溅射纯度为99.999%的铝靶制备了超薄铝膜。
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