Undoped and indium-doped zinc oxide films are deposited on Si substrates by radio frequency reactive sputtering technology.
采用射频反应溅射技术在硅(100)衬底上制备了未掺杂和掺In的ZnO薄膜。
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A novel kinetics model for dc reactive sputtering was proposed.
提出了一个新的直流反应溅动力学模型。
For reactive sputtering, the gradient films with varying ratio of chemical component can be prepared by changing gas flow rate continuously.
对于反应溅射，可通过连续改变反应气体流量制得化学成分比连续变化的梯度薄膜。
Through the technology of RF and DC reactive sputtering manufacture, H2S gas sensors have been developed on silicon substrate on which a heater made of Pt were attached.
通过交流和直流反应溅射，我们以硅基片（表面上有白金加热电极）为基底制作H_2S气敏元件。
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