漏区包含一交替掺杂形态区域。
The drain region includes an alternating-doping profile region.
晶体管包含一栅结构、一源区和一漏区。
The transistor may include a gate structure, a source region, and a drain region.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
Source and drain regions in the semiconductor may define a transistor gate length.
浮动栅极定位于源极区与漏极区之间。
The floating gate is positioned between the source and drain regions.
浮动栅极定位于源极区与漏极区之间。
The floating gate is positioned between the source and drain regions.
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