Its memory cell survival time is longer.
其记忆细胞存活的时间则更长。
What are the general factors influencing t cell immune memory?
那么影响记忆性T细胞免疫的因素有哪些？
The invention provides a memory cell and manufacturing method thereof.
本发明公开了一种存储单元及其制造方法。
The area can be reduced by using such a memory cell.
其面积可通过使用这种存储单元减少。
The circuit can also write information into the memory cell by selective write operation.
该电路也可以经过选择性写入操作把信息写入存储单元。
Standard logic cells, memory design and IO cell design.
标准逻辑单元，存储电路设计及输入输出单元设计。
Standard logic cells, memory design and IO cell design.
标准逻辑单元，存储电路设计及输入输出单元设计。
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