Because according to a studypublished in the journal Cell, newborn neurons in the brain's memory center make room for new memories by moving out the old ones.
《细胞》杂志上刊登的一项研究表明，大脑记忆中枢的新生神经元将原来的记忆挪出去，然后把新记忆放到腾出来的空间里。
Because according to a study published in the journal Cell, newborn neurons in the brain's memory center make room for new memories by moving out the old ones.
根据发表在《细胞》杂志上的一项研究报告，大脑海马体的新生神经元会清除旧有的记忆以接纳新的记忆。
Judith Staerk: you erase the memory of the blood cell, and you bring it back to a state where there is no memory. You can tell that cell to become skin again, or a neuron, or a blood cell.
朱迪斯•思得克：首先要擦除血细胞的记忆，使其成为无记忆状态，然后你再控制它成为皮肤细胞、神经细胞或血细胞。
A computer memory cell ordinarily stores either a zero or a one, but a newly demonstrated example could also store a two or a three.
通常计算机的存储单元能存储0或1，但是一项新的研究证明了能够存储2或3。
Choline, found in protein-rich food such as eggs, is needed by everyone for the production of cell membranes and for making the neurotransmitter acetylcholine, which affects memory.
鸡蛋等蛋白质丰富的食品中富含胆碱。胆碱是人体必需的营养素，因为它参与细胞膜的形成和神经递质乙酰胆碱的合成，而这些会影响记忆。
Its memory cell survival time is longer.
其记忆细胞存活的时间则更长。
The memory cell keeps better antibodies of the antibody population.
记忆单元保存抗体群中亲和力较高的抗体。
While the clonal selection principle is responsible for generating the memory cell population, the immune network theory prevents the population size from increasing quickly.
克隆选择用来产生抗原的记忆细胞群体，免疫网络理论则用来抑制该群体规模的快速增长。
In this algorithm, the data set to be analyzed is taken as the invading antigen and the memory cell generated ACTS as the initial cluster center.
算法中，待分析的数据被视为入侵性抗原，产生的记忆细胞作为聚类分析的初始中心。
The invention discloses a memory cell array arranged multiple in rows and lines.
本发明公开了存储器单元阵列，以多行与多列排列。
Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode.
所述集成电路包括具有二极管及与所述二极管连通的反熔丝的存储器单元。
The invention is directed to a resistive memory cell on a substrate and a resistive memory array.
本发明公开了一种位于基底上的电阻式存储器单元和电阻式存储器阵列。
The resistive memory cell comprises a first gate, a second gate, a common doped region, a contact plug, a bit line and a resistive memory element.
所述电阻式存储器单元包括第一栅极、第二栅极、共用掺杂区域、接触窗插塞、位线以及电阻式存储器元件。
What sequence of events do you think would be required to move the contents of one memory cell in a computer to another memory cell?
你认为要搬移某记忆体单元的内容至另一记忆体单元需要哪些一连串的事件来完成？
This memory comprises a nonvolatile memory cell and a refresh portion for rewriting data in the memory cell.
该存储器备有：非易失性的存储器单元和对存储器单元进行重新写入用的更新部。
By increasing net positive charges on the memory cell, it erases the memory cell and by increasing net negative charges on the memory cell, programs the memory cell.
通过增加存储器单元上的净正电荷以擦除存储器单元，而通过增加存储器单元上的净负电荷以编程存储器单元。
The invention operates a memory cell with charge capturing structure by measuring the current between substrate region and at least one of the source and drain regions of the memory cell.
通过在存储器单元的衬底区域与存储器单元的源极区域及存储 器单元的漏极区域中至少一个之间测量电流，来操作一种具有电荷捕 捉结构的存储器单元。
NROM memory cell, memory array, related devices and methods.
NROM存储器元件，存储器阵列，相关装置和方法。
The invention reduces the size of the memory cell and ensures normal operation of the memory cell.
本发明能缩小存储单元的尺寸，并且保证存储单元能正常工作。
More preferably, the device structure contains a memory cell having three quantum Wells that can be arranged and constructed to define two different memory states.
更优选地，该器件结构包含存储单元，该存储单元具有三个量子阱，该三个量子阱被设置和构造成限定两种不同的存储状态。
One of the main difficulties of quantum computation is that decoherence destroys the information in a quantum computer memory cell.
量子计算机存储单元的相干脱散，破坏量子态中的信息，是量子计算机难以实现的主要原因之一。
The invention provides a memory cell and manufacturing method thereof.
本发明公开了一种存储单元及其制造方法。
The area can be reduced by using such a memory cell.
其面积可通过使用这种存储单元减少。
A memory cell and a data line are controlled with a reset signal, so that data can be reliably outputted in the semiconductor device.
存储单元和数据线用复位信号来控制，以使数据可在该半导体器件中被可靠地输出。
The circuit can also write information into the memory cell by selective write operation.
该电路也可以经过选择性写入操作把信息写入存储单元。
Such customization of programming thresholds can typically be obtained at any cycle of programming the memory cell (215, 640), to increase flexibility in circuit design.
该编程阈值之客制化一般可在编程该存储单元之任一周期(215,640)获得，以增加电路设计之弹性。
The second selection circuit connects the first bit line to the source side sensing circuit so that a source current of the first memory cell is sensed.
以及一第二选择电路，用于该读取操作模式，连接该第一位线至该源极端感测电路以感测该第一存储单元的源极电流。
The comparison logic compares a threshold voltage of a memory cell to at least one pair of fractional reference voltages to generate comparison results.
比较逻辑比较存储单元的阈值电压与至少一对分数参考电压，以生成比较结果。
A programmed region, i. e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed.
在编程此反熔丝一次可编程非易失存储器单元后，已编程的区域(例如为连结)可作为二极管，其形成于反熔丝上。
A programmed region, i. e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed.
在编程此反熔丝一次可编程非易失存储器单元后，已编程的区域(例如为连结)可作为二极管，其形成于反熔丝上。
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