The electron drift velocity as a function of E/N is given, which is in good agreement with experimental result.
计算了不同E/N条件下电子在氮气中的漂移速度，结果与实验数据符合得很好。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
The boundary layer flow control using dielectric barrier surface discharge plasma is simulated using Poisson's equation, drift-diffusion model and N-S equations.
使用泊松方程、漂移扩散模型和N—S方程对介质阻隔面放电等离子体控制边界层流动进行了一体化数值模拟。
To evaluate the effect of drift, one should therefore first know N.
因此要估量插迁的效应，首先应知道N。
To evaluate the effect of drift, one should therefore first know N.
因此要估量插迁的效应，首先应知道N。
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