N-drift 漂移区
N-drift region 漂移区
n drift
n漂移
以上为机器翻译结果,长、整句建议使用 人工翻译 。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响,获得了开态下LDMOS 漂移区中的电场分布。
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Watson began ramming drift netters in 1987, before the U.N. ban.
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模块上移
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不移动