The generation mechanism of stress induced leakage current (SILC) in flash memory cell is studied by experiments.
通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理。
There is also the possibility of storing multiple bits per cell, such as in flash memory chips.
同时也有可能在一个单元存储多个字节，比如闪存芯片。
To reduce bit cost in the same generation of process, multi-bit in one cell technology has been developed for flash memory.
为了在现有条件下进一步降低闪速存储器的单位成本，已开发了各种单管多位技术。
To reduce bit cost in the same generation of process, multi-bit in one cell technology has been developed for flash memory.
为了在现有条件下进一步降低闪速存储器的单位成本，已开发了各种单管多位技术。
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