A new semiconductor temperature sensor with single light source is proposed. The light switch is used to construct a reference channel.
一种新型的单光源半导体温度传感器，利用光开关控制设置参考通道。
This article summarizes the status quo of distribution channel management in China's semiconductor industry and also introduces the business mode and channel structure of semiconductor industry.
本文总结了中国半导体产业分销渠道管理的现状，介绍了半导体行业的销售模式及渠道结构。
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof.
本发明提供一种薄膜晶体管及其制造方法，其中该晶体管的沟道的基本长度被缩短以微型化半导体装置。
The channel region of the semiconductor device has high conductivity, unlimited by the charges movement between molecules, and easily and safety prepared.
该半导体装置的沟道区的导电性极好而不被分子间电荷迁移限制，并且可以被容易且安全地制备。
Through studies of material characteristics suitable for making semiconductor laser heat sinks, we have manufactured panel heat sinks, large-channel heat sinks and micro-channel heat sinks.
通过对适于制作半导体激光器热沉的材料特性进行研究，制作出平板热沉、大通道热沉及微通道热沉。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
The influence of different data collection time of channel current on the side gating hysteresis effect is studied by changing the delay time of semiconductor characteristic testing set.
采用平面选择注入隔离工艺制作MESFET及旁栅电极，通过改变半导体特性测试仪的延迟时间参数，深入研究了不同沟道电流的数据采集时间对旁栅效应迟滞现象的影响。
The single-channel dosimeter of semiconductor is an instrument of measurement.
半导体单道剂量仪是一种测量仪器。
The at least one non-semiconductor monolayer may be positioned at depth of about 4-100 monolayers relative to the interface between the channel and the gate dielectric.
所述至少一个非半导体单层被定位于相对于所述沟道和所述栅极电介质之间的界面大约4- 100个单层的深度处。
High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
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