通过电子尝试隧穿这一过程，我们不仅可以观察到原子与纳米管之间的相互作用，还可以一窥发生在纳米量级上的动力学效应。
We can observe the interaction of the atom and the nanotube as the electron is trying to tunnel, and this offers us a chance to peek at some of the interesting dynamics that happen at the nanoscale.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
并且给出了计入串联电阻影响后进行电流电压方程参数提取的方法，以便把共振隧穿二极管直流模型加入电路模拟软件中进行电路设计。
In order to add the DC model of RTD into SPICE circuit simulator and design RTD circuits, parameters of current-voltage equation were extracted after considering the effect of series resistance.
介绍了共振隧穿二极管（RTD）中电荷积累效应，利用顺序隧穿模型分析了RTD中有电荷积累时器件各部分电压的再分布；
The electric charge accumulation effect in RTD was introduced. The electrical voltage redistribution along the device as charge accumulated was analysed by sequential tunneling model.
用数值分析的方法讨论了中性陷阱对超薄场效应晶体管（MOSFET）隧穿电流的影响。
The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.
报道了共振隧穿二极管（RTD）在压力下的弛豫振荡特性。
The relaxation oscillation characteristics of a resonant tunneling diode (RTD) with applied pressure are reported.
提出了一种基于共振隧穿二极管的新型边沿触发d触发器并将之用于构成二进制分频器。
A novel edge-triggered D-flip-flop based on a resonant tunneling diode (RTD) is proposed and used to construct a binary frequency divider.
由此，设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶体管。
We designed a few kind of spin transistors based on the spin_dependent resonant tunneling effect of the DBMTJs.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.
利用共振隧穿二极管的介观压阻特性，设计了新型的加速度计；
Using Meso-piezoresistance effect of RTD as the principle of a novel accelerometer inthe first.
分析并设计了基于共振隧穿二极管的振荡电路、矢量水声传感器物理结构以及制作工艺，讨论了传感器信号处理方法。
The RTD oscillator, physical structures and fabrication process of vector hydrophone are designed, and the signal processing has been discussed.
通过流片，制作出肖特基栅共振隧穿三极管(SGRTT)。
Schottky gate resonant tunneling transistor (SGRTT) is fabricated.
根据测量得到的电流电压特性考虑串联电阻的影响，提取出共振隧穿二极管的直流参数。
The effect of the series resistance was used to extract the DC parameters for the RTD from the current-voltage relationship.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
该算法为共振隧穿二极管的电路设计提供一种新方法。
Proposed algorithm provides a method for circuit design of resonant tunneling diode.
最后，我们用TCAD工具模拟了隧穿晶体管(TFET)的特性，考察了TFET器件的可靠性并与传统MOSFET做了比较。
Finally, we use the TCAD tools to simulate the characteristics of tunneling FET (TFET) and compare the reliability issues with traditional MOSFET.
简要评述共振隧穿二极管(rtd)器件研究进展。
This paper provides a succinct review of progress and perspective of research on resonant tunneling diodes (RTDs).
简要评述共振隧穿二极管(rtd)器件研究进展。
This paper provides a succinct review of progress and perspective of research on resonant tunneling diodes (RTDs).
应用推荐