通过电子尝试隧穿这一过程，我们不仅可以观察到原子与纳米管之间的相互作用，还可以一窥发生在纳米量级上的动力学效应。
We can observe the interaction of the atom and the nanotube as the electron is trying to tunnel, and this offers us a chance to peek at some of the interesting dynamics that happen at the nanoscale.
并且给出了计入串联电阻影响后进行电流电压方程参数提取的方法，以便把共振隧穿二极管直流模型加入电路模拟软件中进行电路设计。
In order to add the DC model of RTD into SPICE circuit simulator and design RTD circuits, parameters of current-voltage equation were extracted after considering the effect of series resistance.
介绍了共振隧穿二极管（RTD）中电荷积累效应，利用顺序隧穿模型分析了RTD中有电荷积累时器件各部分电压的再分布；
The electric charge accumulation effect in RTD was introduced. The electrical voltage redistribution along the device as charge accumulated was analysed by sequential tunneling model.
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