This paper introduces that we can reduce Within wafer nonuniformity (WIWNU) to achieve part and full planarization by distributing the speed of polishing head and polis.
介绍了在化学机械抛光过程中，可以通过抛光头与抛光台运动速度关系优化配置，降低晶片表面不均匀度，从而更好地实现晶片局部和全局平坦化。
This paper introduces that we can reduce Within wafer nonuniformity (WIWNU) to achieve part and full planarization by distributing the speed of polishing head and polis.
介绍了在化学机械抛光过程中，可以通过抛光头与抛光台运动速度关系优化配置，降低晶片表面不均匀度，从而更好地实现晶片局部和全局平坦化。
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