The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。
The results of electronic microscope scanning of sub-micrometer patterns by far ultraviolet lithography are given.
并给出远紫外光刻亚微米级图形的电镜扫描照片结果。
All-reflective optical systems, due to their material absorption and low refractive index, are used to create the most suitable devices in extreme ultraviolet lithography (EUVL).
由于材料的吸收和低折射率问题，极紫外光刻所采用的光学系统发展趋势是全反射型。
A new design of off-axis five mirrors optics was presented which was used to extreme-ultraviolet lithography. It was very suit for the commercialization at optical quality and free work distance.
本文探讨了一种可应用于极紫外光刻光学系统的离轴五反射镜系统，它在光学质量、自由工作距离方面满足了极紫外光刻商业化的要求。
A new design of off-axis five mirrors optics was presented which was used to extreme-ultraviolet lithography. It was very suit for the commercialization at optical quality and free work distance.
本文探讨了一种可应用于极紫外光刻光学系统的离轴五反射镜系统，它在光学质量、自由工作距离方面满足了极紫外光刻商业化的要求。
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