This paper presents a simple low loss simulated inductor using only two transistors and a few RC passive elements.
本文提出一种只使用两只晶体管和少量RC元件的低耗模拟电感。
The trend is that the number of transistors we can fit on a circuit will double every two years.
该定律认为我们能够在一块电路上放置的晶体管数量每两年会翻一番。
Intel Corp. 's Gordon Moore in 1965 came up with what came to be known as Moore's Law, which stated that the number of transistors on a chip will double about every two years.
1965年，英特尔公司的戈登·摩尔提出了后来被我们熟知的摩尔定律，他指出芯片上可容纳的晶体管数目，约每隔两年便会增加一倍。
Instead of a battery lasting two days, the same battery providing power to sensor systems built with carbon nanotube transistors may last up to two weeks, "said Przybysz."
代之以持续两天的电池，同样的电池为用碳纳米管晶体管制造的传感器系统提供的能量可以持续两周的时间。
He knew about Moore's law, of course, which states that the number of transistors you can put on a microchip doubles about every two years.
他了解摩尔定律，该定律认为集成电路上的晶体管数量每两年就会翻一番。
Today it states, broadly, that the number of transistors on an integrated circuit will double roughly every two years.
如今流传较广的版本是，一个集成电路上的晶体管数量大概每两年增加一倍。
Small size and low power consumption are the two important factors that make transistors preferable to electron tubes.
体积小和消耗功率低，这两个重要因素使晶体管比电子管优越。
A voltage controlled linear resistor which consists of only two field-effect transistors (FET) is presented.
本文提出了一种用两个场效应管实现的压控线性电阻电路。
The experimental results of analogue circuit show that type-S negative resistance can be obtained by using two like polarity transistors with various circuit connections.
模拟电路实验证明用两个同极性的晶体管以多种电路接法都能获得具有S型负阻特性的两端器件。
Two power amplifier output stage using PMOS and NMOS transistors by the special design.
两个功率放大器的输出级均采用PMOS和NMOS晶体管特殊设计而成。
A new two dimensional numerical analysis program SDA-1 is presented for semiconductor devices. It is applicable to two dimensional finite element numerical analysis of bipolar transistors and MOSFET.
本文给出了一个新的半导体器件两维数值分析程序SDA—1，该程序可对双极晶体管及MOS场效应晶体管进行有限元法两维数值分析。
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
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