A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种DMOS辐照正空间电荷阈值电压模型。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOIMOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
By resolving Poisson equation, the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained.
求解泊松方程，由此给出dmos辐照正空间电荷阈值电压模型表示式。
By resolving Poisson equation, the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained.
求解泊松方程，由此给出dmos辐照正空间电荷阈值电压模型表示式。
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