Under both stress conditions stress induced leakage current follows a power law against stress time with different power factors.
在这两种应力条件下，应力导致的漏电流与时间的关系均服从幂函数关系，但是二者的幂指数不同。
The generation mechanism of stress induced leakage current (SILC) in flash memory cell is studied by experiments.
通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理。
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次，本文分别研究了FN隧穿应力和热空穴（HH）应力导致的超薄栅氧化层漏电流瞬态特性。
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次，本文分别研究了FN隧穿应力和热空穴（HH）应力导致的超薄栅氧化层漏电流瞬态特性。
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