The significance of the static random access cell for high-speed digital systems is discussed.
论述了静态存储单元电路对目前高速数字系统的意义。
A 32kb Static Random Access Memory (SRAM), which is widely used at present in VLSI, is designed in this paper.
目前，片上集成存储器一般采用静态结构，本文设计了一款32KB容量的静态随机存储器(SRAM)。
The Single Event Effect(SEE) simulation experiment was carried out on proton accelerators for Static Random Access Memories(SRAMs).
应用质子直线加速器进行了静态随机存取存储器（SRAM）的单粒子效应模拟实验研究。
In one embodiment, the semiconductor device includes a static random access memory (SRAM) cell having numerous NFETs (110) and PFETs (112).
在一个实施例中，所述半导体器件包括具有多个NFET(110)和多个PFET(112)的静态随机存取存储器(SRAM)单元。
The memory on the mainboard is just dynamic random access memory. And static random access memory is the buffer memory between CPU and internal memory.
主板的内存即是动态随机存储器，CPU与内存之间的缓存即是静态随机存储器。
Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs).
描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。
As a class of most important cache for the embedded IP application, Static Random Access Memory (SRAM) has become one of the hottest research topics in the digital integrated circuits field.
静态随机存储器SRAM作为嵌入式IP应用的一类最主要的高速缓存，已经成为当前数字集成电路领域的一大研究热点。
The Phase I grant supported a six-month effort to develop a low-power 'green' battery with a 30-plus year shelf life that will power a SRAM (static random access memory) circuit for a computer device.
阶段I合同为期6个月，开发一个低功率“绿色”电池，附带30年保存期限，为计算机设备SRAM(静态随机存取内存)电路提供动力。
RAM can be classified as Static RAM and Dynamic random access memory.
内存可分为静态存储器和动态随机存取记忆体。
静态随机访问储存器。
Because the compiler allocates constant strings in a static read-only memory, any attempts to modify it cause access violations and random crashes.
因为编译器在静态只读内存中分配常数字符串，所以，尝试修改该内存会导致访问冲突和随机崩溃。
Because the compiler allocates constant strings in a static read-only memory, any attempts to modify it cause access violations and random crashes.
因为编译器在静态只读内存中分配常数字符串，所以，尝试修改该内存会导致访问冲突和随机崩溃。
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