The significance of the static random access cell for high-speed digital systems is discussed.
论述了静态存储单元电路对目前高速数字系统的意义。
A 32kb Static Random Access Memory (SRAM), which is widely used at present in VLSI, is designed in this paper.
目前,片上集成存储器一般采用静态结构,本文设计了一款32 KB容量的静态随机存储器(SRAM)。
The Single Event Effect(SEE) simulation experiment was carried out on proton accelerators for Static Random Access Memories(SRAMs).
应用质子直线加速器进行了静态随机存取存储器(SRAM)的单粒子效应模拟实验研究。
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