The gate source breakdown performance of static induction transistor was studied experimentally.
对静电感应器件的栅源击穿特性做了实验研究。
Methods for improving the high current performance of static induction transistor (SIT) are presented.
描述了改善静电感应晶体管（SIT）大电流特性的新方法。
In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。
In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。
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