The designed fabrication process is full compatible with standard CMOS process.
该工艺和标准的CMOS工艺完全兼容。
This circuit structure is simple and can be realized by the standard CMOS process easily.
该电路结构简单，易于实现，且制作工艺与标准CMOS工艺完全兼容。
The design of the tungsten micro-hotplate can be applied to other thermal-based sensors in the standard CMOS process.
本文的钨微热板的设计可以应用到相关的与标准CMOS工艺兼容的热传感器的设计之中。
This paper presents a method integrating the ISFET and signal process circuit realized in an standard CMOS technology;
本文设计提出了一种基于标准CMOS技术实现ISFET与信号处理电路集成化的设计方法；
These capabilities are not available in standard CMOS and provide a dramatic improvement in performance over traditional sub-volt design approaches.
这些功能在标准CMOS里不可使用，显着改善了传统亚伏设计方法。
Magnetic micro inductor is a new kind of on-chip device, which has a better characteristic, and is compatible with the standard CMOS IC fabrication technology.
磁介质微电感是一种新的片上器件，拥有较高的电感性能，并能够与标准CMOSIC工艺兼容。
The simulating results have proved that the designed circuit has good characteristics. The circuit realized with the standard CMOS process has higher practical value.
仿真结果验证了电路具有良好特性，该电路采用标准CMOS工艺实现，具有较高的实用价值。
The novel design of the Flexfet transistor brings many benefits not realized in standard CMOS processes, which enable sub-volt designs and supports continued voltage scaling.
该Flexfet晶体管设计新颖，可以改善标准CMOS工艺中的分伏设计和电压调节等。
The design schemes in this thesis are all based on the standard CMOS processing techniques, which need not to modify the threshold voltage, and the structures are simple.
文中所有设计方案皆基于标准CMOS工艺而无需修改阈值电压，且结构较简单。
A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector, completely compatible with standard CMOS processes, is designed and implemented in 0.
设计了一种与标准CMOS工艺完全兼容的高速光电探测器和宽带光电集成接收机，并采用0。
SONOS flash memory has numerous advantages, such as excellent salability, high endurance, low power, radiation hardness, and is highly compatible with standard CMOS technologies.
SONOS闪存拥有许多优势，如极好的销路、高持久性、低动力支持、辐射硬度和拥有标准CMOS技术的高压缩性。
The proposed structure circumvents this problem by creating non-volatile memory cells from standard CMOS transistors. Thus, no additional masking or processing steps are necessary.
这里提出的结构解决了这个问题，它利用标准CMOS晶体管来实现非易失性存储器，这样就不需要额外的掩膜或工艺步骤。
The research on the circuit structure and the process technique is carried out to satisfy the demands, especially, the investigation on the ADC manufactured with standard CMOS process.
为了满足这些需求，需要在电路结构和工艺技术方面进行不断的研究，特别是应用标准CMOS工艺来制造这种ADC。
Coplanar transmission lines and integrated inductors are fabricated on different SOI substrates with standard CMOS processes. The attenuation mechanism of the CPW and inductor is analyzed.
采用标准CMOS工艺在不同soi衬底上制备了微带和微带集成电感器件，分析了CPW和集成电感的损耗机制。
De-multiplexed CMOS outputs allow for easy interfacing with low cost FPGAs and standard logic.
通过解复用CMOS输出，能够与低成本FPGA和标准逻辑实现轻松接口。
The flow technology can be effectively applied to standard library development of other CMOS and SOI processes.
此技术可以有效地应用于其他CMOS或SOI工艺标准单元库的开发。
The aim of this thesis is to present CMOS RFIC design in the standard digital CMOS technology.
本文的设计则旨在用标准的数字CMOS工艺来完成射频电路的设计。
A low noise amplifier (LNA) and a mixer realized in standard digital CMOS technology are presented in this thesis.
本文设计了基于标准的数字CMOS工艺的低噪声放大器和混频器。
In this paper, a 10k-gate radiation tolerant CMOS gate array has been developed to assess the intrinsic radiation hardness of circuits built at standard commercial CMOS foundries.
本文利用标准的商业CMOS工艺，设计了一个1万门的抗辐射加固的CMOS门阵列，用以评估商业工艺线制造的电路的抗辐射水平。
Reflective technology based on standard silicon CMOS processing has emerged as a favorable direction for projection displays.
基于常规CMOS硅加工工艺的反射技术为投影显示展现了良好的前程。
Reflective technology based on standard silicon CMOS processing has emerged as a favorable direction for projection displays.
基于常规CMOS硅加工工艺的反射技术为投影显示展现了良好的前程。
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