The invention relates to a device for improving utilization rate of a high vacuum ion beam sputtering target material.
本发明涉及一种高真空离子束溅镀靶材利用率增强装置。
A method to predict the sputtering efficiency of a target is also described as well as a system for quantifying the texture homogeneity of a polycrystalline material.
还公开了一种用于预测一种目标的溅射效率的方法以及一种用于量化多晶物质的结构均匀性的系统。
This revolving target improved on the usage of target material and uniformity of film thickness comparing with conventional cylindric magnetron sputtering target.
与常规的圆柱形磁控溅射靶相比较，该旋转式靶提高了靶材利用率和膜厚均匀度。
The transverse component of magnetic flux intensity is pivotal that affect the utilization rate of target material and quality of deposition film as well as the instability of the sputtering process.
利用有限元理论对靶表面磁通量密度的横向分量进行了模拟分析。
The magnetron sputtering device can effectively overcome the problem that the prior art is low in target material utilization rate and deposition rate.
其可以有效克服现有技术存在的靶材利用率低和沉积速率低的问题。
The target material is used as raw material and a CIGS film can be achieved by further sputtering.
以所述靶材为原料，经一步溅射可获得CIGS薄膜。
The target material is used as raw material and a CIGS film can be achieved by further sputtering.
以所述靶材为原料，经一步溅射可获得CIGS薄膜。
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