The results about the research on the characters of ion beam sputtering show that grid voltage and sputtering gas pressure have great influences on ion beam distribution and current.
溅射特性研究结果表明：屏极电压和溅射气压对离子束均匀性和束流密度影响显著；
For reactive sputtering, the gradient films with varying ratio of chemical component can be prepared by changing gas flow rate continuously.
对于反应溅射，可通过连续改变反应气体流量制得化学成分比连续变化的梯度薄膜。
The higher sputtering yield would result from multiple collision, lateral sputtering and high density energy deposition of gas cluster ion beam.
气体离化团束的高溅射产额可能是由于多体碰撞、侧向溅射及高能量密度的照射引起的。
Varistors with good properties are prepared with adjusting gas fluxes and sputtering times.
通过调节真空室的气体流量和溅射时间，制备了性能优越的变阻器。
Through the technology of RF and DC reactive sputtering manufacture, H2S gas sensors have been developed on silicon substrate on which a heater made of Pt were attached.
通过交流和直流反应溅射，我们以硅基片（表面上有白金加热电极）为基底制作H_2S气敏元件。
The unique smoothing and cleaning effects of gas cluster ion beam wou1d result from multiple collision, lateral sputtering and high density energy deposition.
气体离化团束优良的平坦化和清洁化效果可能与照射中多体碰撞、侧向溅射及高能量密度的沉积相关。
The plasma can be 4 generated by hot-cathode discharge or RF discharge of gas. In addition, the device has four metal plasma sources, two magnetron sputtering targets, cold and hot target supports.
真空室内的气体等离子体可由热灯丝或射频放电产生，4另外还配置了4个金属等离子体源、两套磁控溅射靶和冷却靶台。
ABSTRACT: in this paper a reactive ion plating method and system configuration of Gas ion source enhanced Magnetron Sputtering (GIMS) is presented in details.
摘要：本文详细介绍了气体离子源增强磁控溅射(气离溅射)反应离子镀膜技术和系统配置。
ABSTRACT: in this paper a reactive ion plating method and system configuration of Gas ion source enhanced Magnetron Sputtering (GIMS) is presented in details.
摘要：本文详细介绍了气体离子源增强磁控溅射(气离溅射)反应离子镀膜技术和系统配置。
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