The yttrium-stabilized zirconia(YSZ)and strontium titanium(STO)film buffer layers were prepared by Sol-gel process on Si substrates.
采用溶胶-凝胶法在硅基板上先分别制备钇稳定氧化锆（YSZ）和钛酸锶（STO）两种薄膜缓冲层。
Thin films of lead lanthanum zirconate titanate (PLZT) were deposited by rf magnetron sputtering from oxide targets onto unheated Si substrates.
用磁控射频溅射方法在不加热的硅衬底上沉积生长锆钛酸铅镧（PLZT）薄膜。
This method can be used to directly write many different types of metal or semiconductor features on Si substrates with sub 50 nanometer linewidth.
用这种方法可以在硅表面直接书写线宽度低于50纳米的多种金属和半导体组成的纳米结构。
The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry.
因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
DLC films and gradient composition DLC films were deposited on si substrates in plasma-ion beam enhanced deposition system for the industrial applications and improving the adhesion.
本文基于产业化应用和改善类金刚石膜与基体结合力为目的，在大型工业用等离子体—离子束增强沉积系统中，获得了DLC膜和梯度复合dlc膜。
One of them is to implant terbium ion into silicon oxides thin film which is grown on Si(111) substrates.
第一种是在在矽（111）基板上成长氧化矽，并将镧系元素-铽，以离子布植的方式植入样品。
Patterned crystallization of amorphous silicon (a-Si) on substrates of glass is very important for the fabrication of thin film transistor used in active matrix liquid crystal displays.
以玻璃为基底的非晶硅图形式结晶，对于研制用于矩阵液晶显示的薄膜半导体具有重要意义。
Diamond-like carbon DLC thin films were deposited onto si 100 and high speed steel substrates by mid-frequency magnetron sputtering system SP0806AS, Beijing Power tech Co.
采用SP0806AS中频磁控溅射镀膜机，在硅(100)和高速钢基体上，采用双石墨靶在不同功率下沉积了类金刚石薄膜。
The hydrogen-free diamond-like carbon(DLC) films were deposited on substrates of Si and M2 high-speed steel using a new mid-frequency dual-magnetron sputtering.
利用新型中频对靶磁控溅射在硅和M2高速钢基体上沉积了一系列无氢含铬类金刚石膜。
Transmission electron microscopy study shows the sizes of nc-Si grains on the two different substrates.
透射电子显微镜方法的研究显示了两种衬底上纳米硅晶粒的尺寸。
Transmission electron microscopy study shows the sizes of nc-Si grains on the two different substrates.
透射电子显微镜方法的研究显示了两种衬底上纳米硅晶粒的尺寸。
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