The yttrium-stabilized zirconia(YSZ)and strontium titanium(STO)film buffer layers were prepared by Sol-gel process on Si substrates.
采用溶胶-凝胶法在硅基板上先分别制备钇稳定氧化锆（YSZ）和钛酸锶（ STO）两种薄膜缓冲层。
Thin films of lead lanthanum zirconate titanate (PLZT) were deposited by rf magnetron sputtering from oxide targets onto unheated Si substrates.
用磁控射频溅射方法在不加热的硅衬底上沉积生长锆钛酸铅镧（PLZT）薄膜。
This method can be used to directly write many different types of metal or semiconductor features on Si substrates with sub 50 nanometer linewidth.
用这种方法可以在硅表面直接书写线宽度低于50纳米的多种金属和半导体组成的纳米结构。
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