The results showed that the thin film is mainly composed of Si-C bond.
分析结果表明我们的样品是以碳硅键为主的薄膜。
A possible ionic charge state distributions of He, c, n, o, ne, Mg, si, s and Fe in solar energetic particle events is presented in this paper.
本文发表了在太阳高能粒子事件中，元素氦、碳、氮、氧、氖、镁、硅、硫和铁的离子电荷态的分布。
The good effect has been gained on the hypereutectic Al Si alloys treated with some double refining and modifying agents such as P, S, RE, Sr, Na, C, etc.
采用磷、硫、稀土、锶、钠、碳等进行双重细化变质处理过共晶铝硅合金已取得了良好的效果。
The method of measuring c, s, p, Mn, Si, Cr, Ni, Mo, V, W, ti, Nb, Al element content by DV-4 photoelectric spectroscope on one condition is introduced.
介绍了应用DV - 4光电光谱仪，仅用一种测定条件，测定高合金钢中碳、硫、磷、锰、硅、铬、镍、钼、钒、钨、钛、铌、铝元素的含量的方法。
The influence of growth parameters including gas flow, C/Si ratio, growth temperature and pressure on growth rate and layer uniformity in thickness and doping are discussed.
比较了外延生长参数，如生长温度、生长压强、碳硅比和气流流速，与生长率和净载流子浓度的影响关系。
It is found that the shallow donor levels produced by high dose neutron irradiation are caused by Si-O-C complex compound associated with oxygen carbon and micro-precipitation of oxygen.
发现由于大剂量中子辐照而产生的浅施主是与氧、碳及氧的微沉淀有关的硅-氧-碳络合物。
It is found that the shallow donor levels produced by high dose neutron irradiation are caused by Si-O-C complex compound associated with oxygen carbon and micro-precipitation of oxygen.
发现由于大剂量中子辐照而产生的浅施主是与氧、碳及氧的微沉淀有关的硅-氧-碳络合物。
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