The results showed that the thin film is mainly composed of Si-C bond.
分析结果表明我们的样品是以碳硅键为主的薄膜。
The method of measuring c, s, p, Mn, Si, Cr, Ni, Mo, V, W, ti, Nb, Al element content by DV-4 photoelectric spectroscope on one condition is introduced.
介绍了应用DV - 4光电光谱仪，仅用一种测定条件，测定高合金钢中碳、硫、磷、锰、硅、铬、镍、钼、钒、钨、钛、铌、铝元素的含量的方法。
It is found that the shallow donor levels produced by high dose neutron irradiation are caused by Si-O-C complex compound associated with oxygen carbon and micro-precipitation of oxygen.
发现由于大剂量中子辐照而产生的浅施主是与氧、碳及氧的微沉淀有关的硅-氧-碳络合物。
The good effect has been gained on the hypereutectic Al Si alloys treated with some double refining and modifying agents such as P, S, RE, Sr, Na, C, etc.
采用磷、硫、稀土、锶、钠、碳等进行双重细化变质处理过共晶铝硅合金已取得了良好的效果。
The good effect has been gained on the hypereutectic Al Si alloys treated with some double refining and modifying agents such as P, S, RE, Sr, Na, C, etc.
采用磷、硫、稀土、锶、钠、碳等进行双重细化变质处理过共晶铝硅合金已取得了良好的效果。
应用推荐