The present invention provides methods and apparatus for processing semiconductor substrates.
本发明提供一种用于处理半导体基板的装置。
Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.
还公开使用这些喷头电极总成处理半导体基片的方法。
A metal-oxide secondary emission film can be deposited on glass, ceramic or semiconductor substrates by thermal decomposition of an organo-metal alkoxide.
利用某些有机烷氧基金属化合物的热分解，可在玻璃、金属、陶瓷或半导体基片上沉积相应的金属氧化物次级发射膜。
A full wave analysis of lossy interconnection lines on doped semiconductor substrates in high speed integrated circuits is carried out by means of a finite difference time domain (FDTD) approach.
本文首次利用时域有限差分(FDTD)法分析了高速集成电路芯片内半导体基片上的有耗互连传输线的电特性。
The most established way in semiconductor industry to create such support is the temporary mounting of those materials to rigid carrier substrates.
半导体行业中建造这种支持最公认的方法是临时固定这种衬底材料到刚性载体基底上。
The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry.
因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业。
This method can be used to directly write many different types of metal or semiconductor features on Si substrates with sub 50 nanometer linewidth.
用这种方法可以在硅表面直接书写线宽度低于50纳米的多种金属和半导体组成的纳米结构。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
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