The resistance of the metal probe to semiconductor contact can be quite high.
金属探头与半导体接触时的电阻可能相当高。
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).
一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。
The paper describes the mechanisms of metal-semiconductor contact and the actual applications of this contact in semiconductor technology.
本文评述了金属-半导体接触的各种机理以及这个接触在半导体枝术中的实际应用。
Considering the tunneling effect and the Schottky effect, the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.
运用自洽的蒙特卡罗方法模拟了肖特基接触的隧穿效应。
In this paper, a simple method to measure the specific contact resistance of metal-semiconductor ohmic contact is developed, using the probe heads of the inline four probes.
本文提出一种用直线四探针头测量金属-半导体欧姆接触接触电阻率的简捷方法。
In this paper, a method to determine the specific contact resistance of metal-semiconductor contact — circular ring structure method is presented.
本文中提出了一种测量金属-半导体欧姆接触比接触电阻的新方法-圆环结构测试法。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
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