To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.
为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。
Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.
由此，能获得其中翘曲较少且较不可能发生破裂的半绝缘氮化物半导体晶体衬底。
In addition to the role of compensation to achieve semi-insulating material, there are restrictions on mobility, carrier lifetime and so on.
带隙中的深能级束缚自由电子实现补偿作用外，还有限制迁移率及载流子寿命等特点。
The photon-activated monopole domain in a semi-insulating multi-valley photoconductive semiconductor switch and the dipole domain in a Gunn device are compared.
摘要对比了半绝缘多能谷光电导开关中光激发单极畴和耿氏器件中偶极畴的物理机制。
The photon-activated monopole domain in a semi-insulating multi-valley photoconductive semiconductor switch and the dipole domain in a Gunn device are compared.
摘要对比了半绝缘多能谷光电导开关中光激发单极畴和耿氏器件中偶极畴的物理机制。
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