• By optimizing DRIE parameters and RIE etching the trenches' opening, the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.

    采用经过参数优化DRIE刻蚀深硅并用反应离子刻蚀(RIE)对深槽开口形状进行修正,制造具有理想侧壁形状的深槽,利于介质的完全填充,避免产生空洞。

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  • Mechanism of dry etching damage and main causes for RIE induced - damage are investigated with RIE technique by utilizing PIN photodiodes.

    采用rie利用PIN光电二极管研究干法腐蚀损伤机理引起损伤主要因素

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  • Yak hairs were treated by the microwave electron cy cl otron resonance plasma reactive ion etching(ECR-RIE) equipment to improve its property of weave.

    采用微波电子回旋共振等离子体反应离子刻蚀E CR-R IE装置牦牛纤维进行表面改性,从而改善牦牛毛的可纺性。

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  • The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).

    利用离子束刻蚀(IBE)反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的发射阴极阵列

    youdao

  • The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).

    利用离子束刻蚀(IBE)反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的发射阴极阵列

    youdao

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