In an exemplary embodiment, a plasma processing chamber is provided.
在一个示范性实施例中，提供一种等离子处理室。
A method of fault detection for use in a plasma processing chamber is provided.
提供一种用于等离子处理室的失效检测方法。
The plasma processing chamber includes a substrate support configured to receive a substrate.
该等离子处理室包括一个配置为容纳基片的基片支撑件。
A plasma generation arrangement configured to provide plasma downstream to a plasma processing chamber.
一种等离子生成装置，其配置为将等离子向下提供至等离子处理室。
In another embodiment, a method is provided for depositing a uniform film on a large-area substrate in a plasma-processing chamber.
在另一实施例中，本发明是提供一种在等离子处理腔室中大面积基板上沉积均一膜的方法。
The wafer plasma processing chamber is configured to react the reactive radical with a species at a surface of a wafer disposed in the wafer plasma processing chamber.
晶片等离子体加工室的结构设置成使反应性自由基与放置在晶片等离子体加工室内的晶片表面上的物质反应。
The wafer plasma processing chamber is configured to react the reactive radical with a species at a surface of a wafer disposed in the wafer plasma processing chamber.
晶片等离子体加工室的结构设置成使反应性自由基与放置在晶片等离子体加工室内的晶片表面上的物质反应。
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