Broadly speaking, the embodiments of the present invention provide an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate.

大体而言，本发明的实施例提供了改进的等离子处理机构、设备和方法以提高基片边缘处的处理均匀性。

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Broadly speaking, the embodiments of the present invention provide an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate.

大体而言，本发明的实施例提供了改进的等离子处理机构、设备和方法以提高基片边缘处的处理均匀性。

youdao