Portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.
所述氧化层的部分被移除，以使所述沟槽填充的氧化层作为第一多晶硅层基本平面化。
Granular polysilicon is a very useful form factor.
粒状多晶硅是一个非常有用的生产因素。
The thermocouples were composed of polysilicon and metal.
热偶材料采用多晶硅与金属。
The first polysilicon layer also includes a void therein.
第一多晶硅层还包括在其中的空隙。
The result: Polysilicon prices fell by half from January peaks.
结果是，多晶硅价格从1月份的峰值下跌了一半。
That continuous nature helps lower the cost of the polysilicon coming out.
这有持续性的本质有助于降低多晶硅成本。
A capacitive micro-acoustic sensor with a polysilicon film as diaphragm was designed in this paper.
设计了一种以多晶硅薄膜作为振动膜片的电容式硅微声传感器。
A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.
本文提出了一种新的多晶硅发射区少数载流子注入理论。
The polysilicon can enhance oxygen precipitation nucleating and growing, acting as the intrinsic gettering.
多晶硅能促进硅片内的氧沉淀成核和生长，起内吸杂作用。
Overcapacity in polysilicon and finished panels, and low-cost Chinese production, are responsible for the decline.
价格下跌的原因是，多晶硅和成品面板产能过剩，以及中国生产成本低廉。
A method for determining the number of grain and the average length of grain in polysilicon resistor is given.
提出了一种基于实测伏安特性确定多晶硅电阻中晶粒数及晶粒平均长度的方法。
The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.
该器件为三相结构，采用埋沟和三层多晶硅技术。
That changed this year when solar-panel prices fell as dozens of new Chinese polysilicon-makers started operating.
随着中国数十家新建多晶硅生产商开工运营，太阳能板价格下跌，今年的形势随之发生变化。
Back to the technical track, Reis broke down the list of usual quality consideration suspects when it comes to polysilicon.
回到技术方面，雷斯打破了当谈到多晶硅常见的质量疑虑。
The mobility and the lifetime of minority carriers in polysilicon films are two key parameters of current gain increment.
多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数。
This was a response to tumbling prices of solar panels, triggered largely by a big increase in polysilicon production capacity.
这在很大程度上是多晶硅生产规模大幅提升引发太阳能电池板价格下跌的反应。
Polysilicon films, due to its favourable piezoresistive properties, have been widely applied in MEMS piezoresistive sensors.
多晶硅薄膜良好的压阻特性使其在MEMS压阻式传感器中得到了广泛应用。
For many generations, the most significant part of the EOT scaling problem was the depletion capacitance of polysilicon gates.
很多代以来，EOT缩小的一个大问题就是多晶硅栅的耗尽电容问题。
Polysilicon is doped with barium and melted in a silica crucible containing less than about 0.5 % gasses insoluble in silicon.
多晶硅用钡掺杂并且在含有低于约0.5%的不溶于硅的气体的二氧化硅坩埚中熔化。
Of course, this heavy lifting on the production side would be meaningless if the quality of the granular polysilicon were not up to snuff.
当然，这在生产方面如果粒状多晶硅的质量都没有达到及格，繁重的任务将是毫无意义的。
The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The humidity sensor device consists of comb electrodes, a comb polysilicon heater and the polyimide as the moisture sensing material.
本文研究的新型结构由梳状铝电极、梳状多晶硅加热条以及用作感湿材料的聚酰亚胺组成。
We believe these agreements will significantly reduce our blended polysilicon cost and support our efforts to improve product quality.
我们相信，这些协议将大大减少我们的混纺多晶硅成本和支持我们的努力提高产品质量。
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
The results showed that the arsenic removal with ferric sulfate was better than that with ferric aluminum copolymer and polysilicon metal salt.
结果表明，硫酸铁的除砷效果优于铁铝聚合物和聚硅酸金属盐混凝剂；
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
One was a technique to lay down polysilicon so that each island of a single crystal is large enough to encompass many memory cells or transistors.
第一种技术是铺陈多晶矽的技术，这项技术使每一个单晶矽岛变得足够大，因而能包含更多的记忆胞或电晶体。
An experimental study has been carried out on the doping of polysilicon by ion implantation and diffusion for the preparation of shallow junctions.
本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。
An experimental study has been carried out on the doping of polysilicon by ion implantation and diffusion for the preparation of shallow junctions.
本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。
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