• Overcapacity in polysilicon and finished panels, and low-cost Chinese production, are responsible for the decline.

    价格下跌的原因是,多晶硅和成品面板产能过剩,以及中国生产成本低廉。

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  • That changed this year when solar-panel prices fell as dozens of new Chinese polysilicon-makers started operating.

    随着中国数十家新建多晶硅生产商开工运营,太阳能板价格下跌,今年的形势随之发生变化。

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  • This was a response to tumbling prices of solar panels, triggered largely by a big increase in polysilicon production capacity.

    这在很大程度上是多晶硅生产规模大幅提升引发太阳能电池板价格下跌的反应。

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  • Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.

    多晶硅常用在被称作门的晶体管元件中,已在标准的芯片制造工艺中使用了几十年。

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  • The thermocouples were composed of polysilicon and metal.

    热偶材料采用多晶硅与金属。

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  • The first polysilicon layer also includes a void therein.

    第一多晶硅层还包括在其中的空隙。

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  • A transistor may be formed with a first polysilicon layer covered by a dielectric.

    晶体管可以形成为具有被电介质覆盖的第一多晶硅层。

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  • Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.

    其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。

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  • This material is further purified to semiconductor-grade or solar-grade polysilicon feedstock.

    这种材料还需经进一步纯化处理,生成半导体级或太阳能级多晶硅原料。

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  • A capacitive micro-acoustic sensor with a polysilicon film as diaphragm was designed in this paper.

    设计了一种以多晶硅薄膜作为振动膜片的电容式硅微声传感器。

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  • A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.

    本文提出了一种新的多晶硅发射区少数载流子注入理论。

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  • The company contains costs by using recycled polysilicon, which is relatively easy and inexpensive to buy.

    该公司通过利用回收多晶硅控制了成本。

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  • The polysilicon can enhance oxygen precipitation nucleating and growing, acting as the intrinsic gettering.

    多晶硅能促进硅片内的氧沉淀成核和生长,起内吸杂作用。

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  • The technological conditions of polysilicon preparation has an important effect on the manufacturing process.

    在研制器件过程中,多晶硅制备的工艺条件对其性能影响较大。

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  • A method for determining the number of grain and the average length of grain in polysilicon resistor is given.

    提出了一种基于实测伏安特性确定多晶硅电阻中晶粒数及晶粒平均长度的方法。

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  • A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time.

    首次采用多晶硅发射区RCA技术制备出微波功率晶体管。

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  • The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.

    该器件为三相结构,采用埋沟和三层多晶硅技术。

    youdao

  • The device utilizes three-phase construction, with the technology of buried-channel and four-layer polysilicon.

    该器件采用三相结构,埋沟和四层多晶硅技术。

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  • A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.

    在衬底上形成第二多晶硅层,以便第二多晶硅层填充凹部。

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  • The polysilicon industry in China is in rapid growth and polysilicon plant engineering market is in the ascendant.

    国内多晶硅产业正处在一个快速增长周期,多晶硅工厂的设计市场方兴未艾。

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  • Directional solidification process is an important part that of the physical metallurgy of solar energy polysilicon.

    定向凝固工艺是物理冶金法制备太阳能级多晶硅的一个重要环节。

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  • The intention of the polysilicon tiles is to reduce erosion of the field oxide between closely spaced active regions.

    所述多晶硅瓦片的用意是减少场效氧化物在紧密间隔的有源区之间的侵蚀。

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  • Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening.

    然后,在衬底上形成第一多晶硅层,以便第一多晶硅层填充开口。

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  • The mobility and the lifetime of minority carriers in polysilicon films are two key parameters of current gain increment.

    多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数。

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  • For many generations, the most significant part of the EOT scaling problem was the depletion capacitance of polysilicon gates.

    很多代以来,EOT缩小的一个大问题就是多晶硅栅的耗尽电容问题。

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  • The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.

    本发明涉及一种具有垂直沟道结构的场效应晶体管,及它的制备方法。

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  • The humidity sensor device consists of comb electrodes, a comb polysilicon heater and the polyimide as the moisture sensing material.

    本文研究的新型结构由梳状铝电极、梳状多晶硅加热条以及用作感湿材料的聚酰亚胺组成。

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  • A polycide layer is defined over the impurity doped polysilicon layer. The polycide layer and the polysilicon layer function as a word line.

    多晶硅化金属层设置于杂质掺杂多晶硅层上,而多晶硅化金属层与多晶硅层可作为字线。

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  • The results showed that the arsenic removal with ferric sulfate was better than that with ferric aluminum copolymer and polysilicon metal salt.

    结果表明,硫酸铁的除砷效果优于铁铝聚合物和聚硅酸金属盐混凝剂;

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  • The results showed that the arsenic removal with ferric sulfate was better than that with ferric aluminum copolymer and polysilicon metal salt.

    结果表明,硫酸铁的除砷效果优于铁铝聚合物和聚硅酸金属盐混凝剂;

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