A novel passivation technology of porous silicon (PS) surface, i. e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition (MPCVD) method, was developed.
提出了一种新颖的多孔硅表面钝化技术，即采用微波等离子体辅助的化学气相沉积（MPCVD）方法在多孔硅上沉积金刚石薄膜。
At the same time, the influence of plasma charging and ion bombardment on the quality of silicon oxide are analyzed.
我们同时对反应离子刻蚀工艺中的等离子体充电效应和离子轰击对氧化硅造成的损伤进行了讨论。
Plasma treatment can also change the surface chemistry (and thus surface properties) of other materials, such as silicon, stainless steel, and glass.
等离子处理也能改变其它材料的表面化学(表面性质)，如硅、不锈钢及玻璃。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A new method for post treatment of porous silicon, sulfur passivation by microwave plasma assistance in vacuum, is reported in this paper.
报道了对多孔硅进行后处理的一种新方法，即真空中微波等离子体辅助的硫钝化处理。
The method for determination of aluminum, copper, iron, phosphorus and silicon in metallic chromium has been studied with a direct-reading inductively coupled plasma emission spectrometer.
阐述了用全谱直读型电感耦合等离子体发射光谱仪测定金属铬中铝、铜、铁、磷、硅元素的测试方法的研究。
The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition (CVD) system.
利用微波等离子体化学气相沉积(CVD)设备，在硅基片上进行了金刚石薄膜的沉积实验。
Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.
等离子体化学气相沉积技术制备氢化硅薄膜工艺条件成熟稳定而成为薄膜制备的首选方法。
Cold plasma purification and hydrometallurgy, having their own merits, were two of the most important methods to prepare low cost solar grade Silicon material.
冷等离子体提纯与湿法冶金是制造太阳级硅材料的两种重要方法。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
High aspect ratio structures have been successfully fabricated by plasma cryo-etching on silicon wafers.
等离子体低温刻蚀是一种针对高深宽比结构的干法刻蚀技术。
The optical emission spectrum of r. f. plasma during amorphous silicon based film etching in CF4 gas is detected.
用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。
The silicon thin films on glass substrate were prepared using microwave ECR plasma source enhanced magnetron sputtering.
利用微波ecr等离子体增强磁控溅射沉积技术在玻璃表面制备了硅膜。
Hard and wear-resistant titanium nitride coatings were deposited by pulsed high energy density plasma technique on silicon nitride ceramic cutting tools at ambient temperature.
用高能量密度脉冲等离子体于室温下在氮化硅陶瓷刀具上成功沉积了高硬耐磨的氮化钛涂层。
Regular textured silicon surfaces with various shape and different geometrical parameters were successfully designed and prepared using inductively coupled plasma (ICP) etching technology.
采用感应耦合等离子体刻蚀技术实现了不同形状和几何参数的规则织构化硅片表面的构筑与制备。
This paper introduces the experiment condition and process to carry out hot cutting on silicon nitride ceramics materials with new self-made water-plasma arc equipment.
主要阐述了采用自制新型水介质等离子弧设备对氮化硅陶瓷材料进行加热辅助切削的试验条件及过程。
DLC films were prepared on silicon by pulse-arc plasma deposition.
利用脉冲多弧离子镀技术在硅基底上沉积类金刚石薄膜。
The gate dielectric layer is deposited using a plasma enhanced deposition with a gas mixture comprising a silicon and chlorine containing compound.
门电介质沉积层使用气体包括一个芯片和含氯化合物的混合物等离子增强沉积。
Separately Mixed two different property molybdenum powder with the same nickel-chromium-boron-silicon alloy, then carried out plasma spray piston ring experiments.
试验用两种性能不同的钼粉与同一种镍基合金粉混合，进行了工业等离子喷涂活塞环对比试验。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
Si and impurity elements of Fe and Cu in aluminum-silicon bonding wires were determined by inductively coupled plasma atomic emission spectrometry.
该方法应用于快速测定键合硅铝丝中的各种元素，结果满意。
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池。
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池。
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