In an exemplary embodiment, a plasma processing chamber is provided.
在一个示范性实施例中，提供一种等离子处理室。
A method of fault detection for use in a plasma processing chamber is provided.
提供一种用于等离子处理室的失效检测方法。
The plasma processing chamber includes a substrate support configured to receive a substrate.
该等离子处理室包括一个配置为容纳基片的基片支撑件。
The developing experiment device of RF discharge plasma processing and measurement is introduced.
介绍了自行研制的高频放电等离子体处理及测试实验装置。
A plasma generation arrangement configured to provide plasma downstream to a plasma processing chamber.
一种等离子生成装置，其配置为将等离子向下提供至等离子处理室。
Charged dust particles exist extensively in plasmas produced in space, laboratory as well as for plasma processing.
带电的尘埃粒子广泛存在于宇宙空间、实验室的等离子体装置中和材料的等离子体加工等环境中。
A microwave plasma processing device and a gas supply member capable of forming a uniform thin film on a substrate to be processed.
本发明提供能够在处理基体上形成均匀的薄膜的微波等离子体处理装置和气体供给构件。
Methods in modeling and numerical simulation for the high density plasma processing are introduced, namely, continuous and kinetic methods.
介绍了与高密度等离子体工艺相关的模型和数值模拟方法，即连续流和动力学方法。
The wafer plasma processing chamber is configured to react the reactive radical with a species at a surface of a wafer disposed in the wafer plasma processing chamber.
晶片等离子体加工室的结构设置成使反应性自由基与放置在晶片等离子体加工室内的晶片表面上的物质反应。
The results reflect that treated by low temperature plasma processing the surface squama of yak hair is etched and the effect of air plasma is better than that of oxygen plasma.
研究结果表明，低温等离子体表面改性处理能够刻蚀牦牛毛纤维表面的鳞片，而且空气等离子体的刻蚀效果优于氧等离子体的刻蚀效果；
Broadly speaking, the embodiments of the present invention provide an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate.
大体而言，本发明的实施例提供了改进的等离子处理机构、设备和方法以提高基片边缘处的处理均匀性。
Plasma processing technology is a new technology developed in semiconductor manufacturing.
等离子体加工技术是在半导体制造中创立起来的一种新技术。
In another embodiment, a method is provided for depositing a uniform film on a large-area substrate in a plasma-processing chamber.
在另一实施例中，本发明是提供一种在等离子处理腔室中大面积基板上沉积均一膜的方法。
In another embodiment, a method is provided for depositing a uniform film on a large-area substrate in a plasma-processing chamber.
在另一实施例中，本发明是提供一种在等离子处理腔室中大面积基板上沉积均一膜的方法。
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