Gallium nitride turned out to be difficult to grow without defects, and although n-type gallium nitride could be made easily, p-type could not.
氮化镓最终被发现很难做到没有瑕疵，即使n型氮化镓很容易被造出，p型却不然。
An external circuit provides a path for the electrons to return to the p-type material, producing an electric current along the way that continues as long as light strikes the solar cell.
此时接上一条外线电路，电子便通过线路流动到p层。只要光束持续地撞击太阳能电池，就会有持续的电流。
He found that producing p-type gallium nitride, which made use of ammonia at high temperatures, trapped hydrogen atoms inside the crystal.
他发现在生成p型氮化镓的时候需要利用高温氨，以致于把氢原子引入了晶体之中。
In the late 1980s Isamu Akasaki and his colleagues at Nagoya University created the first p-type gallium nitride by incorporating tiny amounts of magnesium.
20世纪80年代后叶akasaki和他的同事们在名古屋大学通过添加少许镁制造出首例p型氮化镓。
The process for this new structure is compatible with the normal P type LDMOS.
根据以上结构制定新工艺，该工艺与常规P型LDMOS兼容。
The SEs were rich in mitochondria, P type plastids, and some SEs had nacreous wall.
筛分子内有较丰富的线粒体、P型质体，有些筛分子有珠光壁。
The prepared target material has the characteristics of P type electricity conduction.
所制备的靶材具有p型导电的特征。
The F-P type tunable liquid crystal (LC) optical filter is a kind of compact tunable filter with narrow bandwidth and low tuning voltage.
型可调谐液晶光学滤波器是一种小体积窄带宽低压调谐滤波器。
As transistors get smaller, however, laying down n-type and p-type materials in proximity gets harder, thanks once again to fluctuations in the concentrations of dopants.
然而，晶体管越小，制造PN结的难度就越大，这也是受到了掺入元素浓度波动的影响。
The results show that n-type silicon piezoresistors should be long while p-type silicon piezoresistors should be short and placed in the root of the microcantilever to obtain higher sensitivities.
结果表明：为获得较高灵敏度，n型硅压阻应做长，p型硅压阻应做短并安排在固定端。
In this case, as the P-type and N-type materials, any material generally preferably used for thermoelectric pairs can be used.
在这种情况下，作为P型和N型材料，可以使用通常优选地用于热电偶的任何材料。
In this paper, theories of ZnO film p-type doping are introduced in several aspects, including self-compensation effect, madelung energy, and thermodynamics.
本文分别从自补偿效应，马德隆能以及热力学等角度介绍了氧化锌薄膜的p型掺杂的理论研究。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
Analysis and calculation to structure of new small size P-type pintle injection nozzle was introduced.
并介绍了采用有限元法对新型小尺寸P系列轴针式喷油嘴结构进行的分析计算。
Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
Laser is used as active light source for the first time in photoeleotrochemioal image deposition on P-type silicon substrate, and pictures with clear structures are obtained.
本文首次用激光作激励光源，在P型硅片上成功地进行了光电化学成像沉积，得到层次清晰的图像。
Effects of source box, vacuum shell, dead layer and P-type wick in the calculation are considered in detail.
计算中仔细考虑了源盒、真空壳、死层及P型芯等的影响。
In this paper, the problem on the stable region of the motion of P-type retrograde minor bodies in the solar system is discussed.
本文讨论了太阳系P型逆行小天体运动的稳定区域问题。
P-type transition of ZnO film has recently attracted considerable interest due to its potential applications. Diverse methods have been researched by many people.
近来氧化锌薄膜的p型转化研究是一个热点，人们尝试了不同的方法来实现。
The P-type conductive transparent oxide film obtained by the method of the invention has better application prospect in the fields of transparent electronics and novel photoelectric devices.
本发明方法获得的P型导电透明氧化物薄膜在透明电子学和新型光电器件领域具有较好的应用前景。
The Cobalt electrode does not show photoresponse in the positive scan while it shows P-type photoresponse in the negative scan.
纯钴电极电位正向扫描时不显示光响应，负向扫描时显示阴极光电流。
Compared with the above two ILCs, the convergence condition of P-type ILC is much stricter and its robustness is worse. Besides, convergence speed of P-type ILC is much slower than that of D-type ILC.
与这两种迭代学习控制相比，P型迭代学习控制的收敛条件更加严苛，收敛性和鲁棒性较差，而且收敛速度比以上两种控制方法要慢得多。
By compensating with P-type bootstrapped switch, this circuit can overcome nonlinear distortion, which is generally introduced by signal-dependent on-resistance, and improve sampling resolution.
采用P型栅压自举开关补偿技术，可以有效地克服采样管导通电阻变化引入的非线性失真，提高采样精度。
By compensating with P-type bootstrapped switch, this circuit can overcome nonlinear distortion, which is generally introduced by signal-dependent on-resistance, and improve sampling resolution.
采用P型栅压自举开关补偿技术，可以有效地克服采样管导通电阻变化引入的非线性失真，提高采样精度。
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