The process for this new structure is compatible with the normal P type LDMOS.
根据以上结构制定新工艺，该工艺与常规P型LDMOS兼容。
The prepared target material has the characteristics of P type electricity conduction.
所制备的靶材具有p型导电的特征。
The prepared target material has the characteristics of P type electricity conduction.
所制备的靶材具有p型导电的特征。
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