Results showed that photoluminescence quenching of NPB layer occurs more quickly than that of CBP layer in the authors' devices.
研究结果显示在作者所制备的器件中NPB层中激子的猝灭速度要比CBP层中的激子猝灭速度快。
Results showed that photoluminescence quenching of NPB layer occurs more quickly than that of CBP layer in the authors' devices.
研究结果显示在作者所制备的器件中NPB层中激子的猝灭速度要比CBP层中的激子猝灭速度快。
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