Results showed that photoluminescence quenching of NPB layer occurs more quickly than that of CBP layer in the authors' devices.
研究结果显示在作者所制备的器件中NPB层中激子的猝灭速度要比CBP层中的激子猝灭速度快。
We obtained that the CBP thickness near to the NPB layer is the greater influence factor on the performance of the device then the CBP layer near to the BCP layer.
得出对器件性能起主导作用的是靠近NPB层的CBP厚度对器件的性能有较大影响。
We obtained that the CBP thickness near to the NPB layer is the greater influence factor on the performance of the device then the CBP layer near to the BCP layer.
得出对器件性能起主导作用的是靠近NPB层的CBP厚度对器件的性能有较大影响。
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